Damping archivos - Lifasa https://lifasa.com/en/productos/damping/ Fri, 11 Oct 2019 10:26:22 +0000 en-US hourly 1 DAM1 https://lifasa.com/en/producto/dam1/ Tue, 28 Aug 2018 11:23:54 +0000 http://lifasa.com/?post_type=avada_portfolio&p=4071 La entrada DAM1 se publicó primero en Lifasa.

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IGBT Damping Capacitor DAM1

Description

Damping capacitors DAM are used for protecting semiconductors (IGBT transistors). They are charged and discharged repetitively. Very high peak currents are carried.

Construction

The self healing capacitor elements are enclosed in a cylindrical case sealed with PU resin. They are constructed from PP film. This enables the unit to carry high inrush currents with low self inductance and series resistance.

 

Also can support high peak currents and high currents RMS. Capacitor may be assembled at the position that IGBT requires.

Rated voltage UN DC 1000 – 3200 V
Self inductance LN ≤ 10nH
Dielectric Polypropylene
Capacitance tolerance ± 10%
Working temperature – 25 / 70 ºC
Storage temperature – 40 / 70 ºC
Voltage test Between terminals (during 10s): 1,5xUN DC
Max. Torque M8 – 7 Nm
Case Cylindrical
Overpressure disconnection No
Standard IEC 61071

Other powers, voltages and frequencies on request.

File Date Size
Datasheet 19/04/2018 0.1 MB

Contact us if you need more information

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La entrada DAM1 se publicó primero en Lifasa.

]]> DAM2 https://lifasa.com/en/producto/dam2/ Tue, 28 Aug 2018 11:18:46 +0000 http://lifasa.com/?post_type=avada_portfolio&p=4067 La entrada DAM2 se publicó primero en Lifasa.

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IGBT Damping Capacitor DAM2

Description

Damping capacitors DAM are used for protecting semiconductors (IGBT transistors). They are charged and discharged repetitively. Very high peak currents are carried.

Construction

The self-healing capacitor elements are enclosed in a rectangular plastic case sealed with PU resin. They are constructed from PP film technology MKP. This enables the unit to carry high inrush currents with low self-inductance and series resistance.

Their terminals allow fixing on the semiconductor. They can be assembled on the position that semiconductor requires.

Rated voltage UN DC 2500 – 3600 V
Self inductance LN ≤ 12nH
Dielectric Polypropylene
Capacitance tolerance ± 10%
Working temperature – 25 / 70 ºC
Storage temperature – 40 / 70 ºC
Voltage test Between terminals (during 10s): 1,5xUN DC
Fixing M5

M6
Case Prismatic
Overpressure disconnection No
Standard IEC 61071

Other powers, voltages and frequencies on request.

File Date Size
Datasheet 19/04/2018 0.1 MB

Contact us if you need more information

[contact-form-7]

La entrada DAM2 se publicó primero en Lifasa.

]]> DAM3 https://lifasa.com/en/producto/dam3/ Tue, 28 Aug 2018 11:12:56 +0000 http://lifasa.com/?post_type=avada_portfolio&p=4063 La entrada DAM3 se publicó primero en Lifasa.

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IGBT Damping Capacitor DAM3

Description

Damping capacitors DAM are used for protecting semiconductors (IGBT transistors). They are charged and discharged repetitively. Very high peak currents are carried.

Construction

The self-healing capacitor elements are enclosed in a rectangular plastic case sealed with PU resin. They are constructed from metallized PP film. Unique capacitor design assures very low values of self inductance and resistance.

Outlets that assure also mechanical fixing are represented by metal bolts. It provides fixing directly to semiconductor module. Design allows connecting several units in parallel, one over the other.

Rated voltage UN DC 600 – 1400 V
Self inductance LN ≤ 12nH
Dielectric Polypropylene
Capacitance tolerance ± 10%
Working temperature – 25 / 70 ºC
Storage temperature – 40 / 70 ºC
Voltage test Between terminals (during 10s): 1,5xUN DC
Fixing M5

M6
Case Prismatic
Overpressure disconnection No
Standard IEC 61071

Other powers, voltages and frequencies on request.

File Date Size
Datasheet 19/04/2018 0.1 MB

Contact us if you need more information

[contact-form-7]

La entrada DAM3 se publicó primero en Lifasa.

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